GDC-2A4S1 4 Channel SiC Gate Driver Board

GDC-2A4S1 4 Channel SiC Gate Driver Board

176 €

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Categories: SKU: GDC-2A4S1
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Applications

  • 4 Switch Isolated SiC/IGBT/MOSFET Gate Driver

  • Full Bridge Drives

  • Switched Mode Power Supplies

  • PFC Rectifiers

Features

  • Suitable for 1200V SiCs, IGBTs & MOSFETs up-to 120A

  • 110ns propagation delay, 100KV/us CMR

  • Short circuit protection with soft shutdown

  • Active miller and output UVLO protection

  • 1200 Vdc working voltage with 3 KVac isolation

  • Configurable dead-time, PWM/Indep. inputs

  • Fault feedback and fault latch protection

 

 

Specifications

ParameterNotesSpecifications (IGBT)Specifications (SiC)
Input VoltageMaximum750 VDC750 VDC
Input VoltageRecommended600 VDC600 VDC
Output CurrentRMS, Max. Per Phase50 A50 A
Output Power600 VDC, 415 VAC Out36 kVA36 kVA
Output Power700 VDC, 480 VAC Out41.5 kVA41.5 kVA
Overload Capacity30s Max. @ 25°C150%150%
Over-Voltage ProtectionVaristor: V25S625P825 VDC825 VDC
Short Circuit ProtectionGate Driver Based✔✔
Short Circuit CurrentTypical315 A210 A
Over Temperature ProtectionTrips @ 85°C✔✔
Over Load ProtectionMore Information in Datasheet✘✘
Switching FrequencyWith Derating30 kHz50 kHz
Switching FrequencyWithout Derating5 kHz20 kHz
Dead-timeMinimum2.2 μs0.3 μs
Capacitor TypeMetallized Polypropylene FilmMetallized Polypropylene Film
DC-Link Capacitance200uF | 900V200uF | 900V
Dimensions260 x 292.5 x 161.5 (mm)260 x 292.5 x 161.5 (mm)

* Note 1: All ratings are given at Vs=15V and 25°C ambient temperature unless otherwise specified.

 

FAQs

Selecting the right value of the external gate resistance is essential in limiting the noise and energy loses in the switching operation and it’s selection may vary depending on the transistor being used. The data sheet of the transistor IC shows recorded test values of operation under optimal condition which also includes the value of external gate resistance (RGATE) which enables switching while minimizing turn on (Eon) and turn off (EOFF) loses.

The optimal value of gate driver output voltage depends on the switch being used. Usually SiC FETs come in multiple recommended voltages such as +20/-5V, +18/0V and +15/-5V. You can find more information in Absolute Maximum Ratings table in switch datasheet.

SiC gate drivers have higher common mode rejection and low propagation delay as compared to IGBT gate drivers, making them suitable for higher speed applications while, at the same time, having all the advanced protection features.

Each output channel of the gate driver board has a male plug connector which can be directly connected to the gate-source/emitter terminal with the selected gate resistance to provide with the required gate voltage for the switching operation.

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