GDX-4A2S1 2 Channel High Speed SiC MOSFET/IGBT Gate Driver Board
GDX-4A2S1 2 Channel High Speed SiC MOSFET/IGBT Gate Driver Board
104 €
Applications
Features
Specifications
Parameter | Value | Unit | Parameter | Value | Unit |
---|---|---|---|---|---|
Output Channels | 2 | – | Output Voltage | +20/-5. +18/0, +15/0, +15/-5, +15/-15 | V |
Peak Output Current | 4 | A | Avg. Output Power per Channel | 500 | mW |
Input to Output Isolation | 3000 | Vac | Max. Working Insulation Voltage | 1200 | V |
Max. Propagation Delay | 30 | ns | Min. Common Mode Rejection (CMR) | 100 | kV/us |
Operating Temperature | -25 to +70 | °C | Maximum Frequency | 5 | MHz |
Input Modes | Configurable PWM / High-Low / Dual | – | Dead-Time | User Adjustable | – |
* Note 1: All ratings are given at Vs=15V and 25°C ambient temperature unless otherwise specified.
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